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Volatile resistive switching in Cu/TaOx/delta-Cu/Pt devices

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dc.contributorVirginia Techen
dc.contributor.authorLiu, T.en
dc.contributor.authorVerma, Meghnaen
dc.contributor.authorKang, Y. H.en
dc.contributor.authorOrlowski, Marius K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:50Zen
dc.date.available2014-04-16T14:16:50Zen
dc.date.issued2012-08-01en
dc.description.abstractA volatile switching of conductive filament (CF) in a Cu/TaOx/delta-Cu/Pt device has been observed. The device differs from a conventional Cu/TaOx/Pt device by the insertion of a thin Cu-layer (delta-Cu) between the electrolyte and the inert electrode. The Cu CF is formed the same way as in the conventional nonvolatile devices. However, when applied voltage becomes zero, CF ruptures spontaneously. The dynamic balance between Cu+ field-supported hopping transport and the Cu self-diffusion explains the effect of CF volatility. The device can operate reliably in volatile and nonvolatile modes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746276]en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLiu, Tong; Verma, Mohini; Kang, Yuhong; et al., "Volatile resistive switching in Cu/TaOx/delta-Cu/Pt devices," Appl. Phys. Lett. 101, 073510 (2012); http://dx.doi.org/10.1063/1.4746276en
dc.identifier.doihttps://doi.org/10.1063/1.4746276en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47426en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/101/7/10.1063/1.4746276en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectCopperen
dc.subjectElectrodesen
dc.subjectMagnetization reversalsen
dc.subjectElectrical resistivityen
dc.subjectInterface diffusionen
dc.titleVolatile resistive switching in Cu/TaOx/delta-Cu/Pt devicesen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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