Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing
dc.contributor | Virginia Tech | en |
dc.contributor.author | Han, D. S. | en |
dc.contributor.author | Asryan, Levon V. | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.date.accessed | 2014-03-27 | en |
dc.date.accessioned | 2014-04-16T14:16:49Z | en |
dc.date.available | 2014-04-16T14:16:49Z | en |
dc.date.issued | 2008-06-01 | en |
dc.description.abstract | We study the optical output power of a semiconductor laser, which exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells. Even if there is out-tunneling leakage of carriers from QDs, the intensity of parasitic recombination outside QDs remains restricted with increasing injection current. As a result, the light-current characteristic becomes increasingly linear, and the slope efficiency grows closer to unity at high injection currents-a fascinating feature favoring the use of tunneling-injection of both electrons and holes into QDs for high-power lasing. (C) 2008 American Institute of Physics. | en |
dc.description.sponsorship | U.S. Army Research Office under Grant No. W911-NF-05-1-0308 | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Han, Dae-Seob; Asryan, Levon V., "Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing," Appl. Phys. Lett. 92, 251113 (2008); http://dx.doi.org/10.1063/1.2952488 | en |
dc.identifier.doi | https://doi.org/10.1063/1.2952488 | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | http://hdl.handle.net/10919/47422 | en |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/92/25/10.1063/1.2952488 | en |
dc.language.iso | en_US | en |
dc.publisher | AIP Publishing | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | Modulation bandwidth | en |
dc.subject | Active-region | en |
dc.subject | Laser | en |
dc.subject | Well | en |
dc.subject | Temperature | en |
dc.title | Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing | en |
dc.title.serial | Applied Physics Letters | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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