Persistent photoconductivity in low-energy argon ion-bombarded semi-insulating gaAs

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dc.contributorVirginia Techen
dc.contributor.authorVaseashta, A.en
dc.contributor.authorBurton, Larry C.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:45Zen
dc.date.available2014-04-16T14:16:45Zen
dc.date.issued1991-03-01en
dc.description.abstractTime-dependent phototransport measurements are presented for low-energy argon ion-bombarded semi-insulating liquid-encapsulated Czochralski GaAs. Distinct changes caused by ion beam etching were persistent photoconductivity and an increase in photosensitivity. The time dependence of photoconductivity indicated direct participation of the EL2 center. An ion beam induced and optically generated metastable defect state is suggested in the near-surface disordered region to describe the observed phenomena.en
dc.description.sponsorshipTexas Instrumentsen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationVaseashta, A; Burton, LC, "Persistent photoconductivity in low-energy argon ion-bombarded semi-insulating gaAs," Appl. Phys. Lett. 58, 1193 (1991); http://dx.doi.org/10.1063/1.104362en
dc.identifier.doihttps://doi.org/10.1063/1.104362en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47400en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/58/11/10.1063/1.104362en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectSlow-relaxation phenomenaen
dc.subjectPhotoelectronic propertiesen
dc.subjectGallium arsenideen
dc.subjectDamageen
dc.subjectSiliconen
dc.subjectDefectsen
dc.titlePersistent photoconductivity in low-energy argon ion-bombarded semi-insulating gaAsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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