Effect of internal optical loss on the modulation bandwidth of a quantum dot laser
dc.contributor | Virginia Tech | en |
dc.contributor.author | Wu, Y. C. | en |
dc.contributor.author | Suris, R. A. | en |
dc.contributor.author | Asryan, Levon V. | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.date.accessed | 2014-03-27 | en |
dc.date.accessioned | 2014-04-16T14:16:41Z | en |
dc.date.available | 2014-04-16T14:16:41Z | en |
dc.date.issued | 2012-03-01 | en |
dc.description.abstract | We show that the internal optical loss, which increases with free-carrier density in the waveguide region, considerably reduces the modulation bandwidth omega(-3 dB) of a quantum dot laser. At a certain optimum value j(0)(opt) of the dc component of the injection current density, the maximum bandwidth omega(max)(-3dB) is attained and the modulation response function becomes as flat as possible. With internal loss cross-section sigma(int) increasing and approaching its maximum tolerable value, omega(max)(-3dB) decreases and becomes zero. As with j(0)(opt), there also exists the optimum cavity length, at which omega(-3 dB) is highest; the larger is sigma(int), the longer is the optimum cavity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697683] | en |
dc.description.sponsorship | U.S. Army Research Office (Grant No. W911-NF-08-1-0462) | en |
dc.description.sponsorship | China Scholarship Council | en |
dc.description.sponsorship | Russian Foundation for Basic Research (Grant No. 11-02-00573) | en |
dc.description.sponsorship | Program "Fundamental Research in Nanotechnology and Nanomaterials" of the Presidium of the Russian Academy of Sciences | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Wu, Yuchang; Suris, Robert A.; Asryan, Levon V., "Effect of internal optical loss on the modulation bandwidth of a quantum dot laser," Appl. Phys. Lett. 100, 131106 (2012); http://dx.doi.org/10.1063/1.3697683 | en |
dc.identifier.doi | https://doi.org/10.1063/1.3697683 | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | http://hdl.handle.net/10919/47377 | en |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/100/13/10.1063/1.3697683 | en |
dc.language.iso | en_US | en |
dc.publisher | AIP Publishing | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | Intervalence band absorption | en |
dc.subject | Confined active-region | en |
dc.subject | Semiconductor-lasers | en |
dc.subject | Diode-lasers | en |
dc.subject | Well lasers | en |
dc.subject | Threshold | en |
dc.subject | Power | en |
dc.subject | Gain | en |
dc.title | Effect of internal optical loss on the modulation bandwidth of a quantum dot laser | en |
dc.title.serial | Applied Physics Letters | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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