Production of films of SiO.sub.2 by chemical vapor deposition

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorAgaskar, Pradyot A.en
dc.contributor.inventorPeng, Chia-Tien Shianen
dc.contributor.inventorShi, Tianen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:49Zen
dc.date.available2016-08-24T17:53:49Zen
dc.date.filed1993-11-08en
dc.date.issued1997-01-14en
dc.description.abstractThe chemical vapor deposition of hydridospherosiloxane to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. The chemical vapor deposition process synthesized compounds with the general formula, EQU (HSiO.sub.3/2).sub.n, with n being an even number ranging from 8 to a very large number. More particularly, it relates to the vapor deposition of oligomeric hydrogensilsesquioxanes, henceforth referred to as hydridospherosiloxanes. The hydridospherosiloxanes are used directly in a chemical vapor deposition reactor to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. Hydridospherosiloxanes and soluble hydrogensilsesquioxane resin are produced having the formula EQU (HSiO.sub.3/2).sub.n, where n is an even integer greater than 8.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8148391en
dc.identifier.patentnumber5593727en
dc.identifier.urihttp://hdl.handle.net/10919/72329en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/27/937/055/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcC01B33/00en
dc.subject.cpcC08G77/12en
dc.subject.uspc427/248.1en
dc.subject.uspcother427/255.37en
dc.subject.uspcother528/31en
dc.titleProduction of films of SiO.sub.2 by chemical vapor depositionen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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