Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films

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dc.contributorVirginia Techen
dc.contributor.authorDesu, Seshu B.en
dc.contributor.authorPan, Weien
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:46Zen
dc.date.available2014-04-16T14:16:46Zen
dc.date.issued1996-01-01en
dc.description.abstractFerroelectric SrBi2TaxNb2-xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHCIFCF3, a special etching gas, known to be less environmentally hazardous compared to the other hydrofluorocarbons, was employed in this study. The etch rates as a function of etching parameters were investigated. An etch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface residues were removed by a postetching cleaning process. (C) 1996 American Institute of Physics.en
dc.description.sponsorshipSharp Corporation Japanen
dc.description.sponsorshipCERAM, Inc. of COen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDesu, SB; Pan, W, "Reactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin films," Appl. Phys. Lett. 68, 566 (1996); http://dx.doi.org/10.1063/1.116402en
dc.identifier.doihttps://doi.org/10.1063/1.116402en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47406en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/68/4/10.1063/1.116402en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectEtchingen
dc.subjectFerroelectric thin filmsen
dc.subjectSurface cleaningen
dc.subjectEnvironmental impactsen
dc.subjectNiobiumen
dc.titleReactive ion etching of ferroelectric SrBi2TaxNb2-xO9 thin filmsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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