Modeling of high fluence Ti ion implantation and vacuum carburization in steel

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dc.contributorVirginia Tech. Department of Materials Engineeringen
dc.contributorNaval Research Laboratory (U.S.). Chemistry Divisionen
dc.contributor.authorFarkas, Dianaen
dc.contributor.authorSinger, Irwin L.en
dc.contributor.authorRangaswamy, M.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:21Zen
dc.date.available2015-05-21T19:47:21Zen
dc.date.issued1985en
dc.description.abstractConcentration‐versus‐depth profiles have been calculated for Ti and C in Ti‐implanted 52100 steel. A computer formalism was developed to account for diffusion and mixing processes, as well as sputtering and lattice dilation. A Gaussian distribution of Ti was assumed to be incorporated at each time interval. The effects of sputtering and lattice dilation were then included by means of an appropriate coordinate transformation. C was assumed to be gettered from the vacuum system in a one‐to‐one ratio with the surface Ti concentration up to a saturation point. Both Ti and C were allowed to diffuse. A series of experimental (Auger) concentration‐versus‐depth profiles of Ti‐implanted steel were analyzed using the above‐mentioned assumptions. A best fit procedure for these curves yielded information on the values of the sputtering yield, range, and straggling, as well as the mixing processes that occur during the implantation. The effective diffusivity of Ti was found to be 6×10− 1 5 cm2/sec, a value that is consistent with the cascade mixing mechanism. The effective diffusivity of C was found to be 6×10− 1 5 cm2/sec, and the sputtering yield by Ti atoms was best fit by a value of about 2. The observed range and straggling values were in very good agreement with the values predicted by existing theories, so long as the lattice was allowed to dilate.en
dc.format.extent8 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFarkas, D., Singer, I. L., Rangaswamy, M. (1985). Modeling of high fluence Ti ion implantation and vacuum carburization in steel. Journal of Applied Physics, 57(4), 1114-1120. doi: 10.1063/1.334554en
dc.identifier.doihttps://doi.org/10.1063/1.334554en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52409en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/57/4/10.1063/1.334554en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectSputteringen
dc.subjectFluid mixingen
dc.subjectCarburizationen
dc.subjectComputer simulationen
dc.subjectDiffusionen
dc.titleModeling of high fluence Ti ion implantation and vacuum carburization in steelen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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