1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

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dc.contributor.authorQin, Yuanen
dc.contributor.authorXiao, Mingen
dc.contributor.authorZhang, Ruizheen
dc.contributor.authorXie, Qingyunen
dc.contributor.authorPalacios, Tomásen
dc.contributor.authorWang, Boyanen
dc.contributor.authorMa, Yunweien
dc.contributor.authorKravchenko, Ivanen
dc.contributor.authorBriggs, Dayrl P.en
dc.contributor.authorHensley, Dale K.en
dc.contributor.authorSrijanto, Bernadeta R.en
dc.contributor.authorZhang, Yuhaoen
dc.date.accessioned2024-04-08T14:49:01Zen
dc.date.available2024-04-08T14:49:01Zen
dc.date.issued2023-07en
dc.description.abstractThis work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 m ·cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.en
dc.description.sponsorshipThis work was supported in part by the National Science Foundation under Grant ECCS-2230412 and Grant ECCS-2045001.en
dc.description.versionAccepted versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/LED.2023.3282025en
dc.identifier.issue7en
dc.identifier.urihttps://hdl.handle.net/10919/118510en
dc.identifier.volume44en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectPower electronicsen
dc.subjectwide bandgapen
dc.subjectgallium nitrideen
dc.subjectvertical deviceen
dc.subjectbreakdown voltageen
dc.subjectreliabilityen
dc.title1 kV GaN-on-Si Quasi-Vertical Schottky Rectifieren
dc.title.serialIEEE Electron Device Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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