Dislocation-pipe diffusion in nitride superlattices observed in direct atomic resolution

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dc.contributor.authorGarbrecht, Magnusen
dc.contributor.authorSaha, Bivasen
dc.contributor.authorSchroeder, Jeremy L.en
dc.contributor.authorHultman, Larsen
dc.contributor.authorSands, Timothy D.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2019-01-09T17:29:48Zen
dc.date.available2019-01-09T17:29:48Zen
dc.date.issued2017-04-06en
dc.description.abstractDevice failure from diffusion short circuits in microelectronic components occurs via thermally induced migration of atoms along high-diffusivity paths: dislocations, grain boundaries, and free surfaces. Even well-annealed single-grain metallic films contain dislocation densities of about 1014 m-2; hence dislocation-pipe diffusion (DPD) becomes a major contribution at working temperatures. While its theoretical concept was established already in the 1950s and its contribution is commonly measured using indirect tracer, spectroscopy, or electrical methods, no direct observation of DPD at the atomic level has been reported. We present atomically-resolved electron microscopy images of the onset and progression of diffusion along threading dislocations in sequentially annealed nitride metal/semiconductor superlattices, and show that this type of diffusion can be independent of concentration gradients in the system but governed by the reduction of strain fields in the lattice.en
dc.description.notesThe Knut and Alice Wallenberg (KAW) Foundation is acknowledged for the Electron Microscope Laboratory in Linkoping.M.G., J.L.S., and L.H.acknowledge financial support from the Swedish Research Council [RAC Frame Program (2011-6505), Project Grant 2013-4018, and Linnaeus Grant (LiLi-NFM)] as well as the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU 2009-00971).B.S.and T.D.S.acknowledge financial support from the National Science Foundation and U.S.Department of Energy (Award No.CBET-1048616).A.Friedman is acknowledged for assistance with SolidWorks.en
dc.description.sponsorshipSwedish Research Council [2013-4018, 2011-6505]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; National Science Foundation; U.S.Department of Energy [CBET-1048616]en
dc.format.extent7en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/srep46092en
dc.identifier.issn2045-2322en
dc.identifier.other46092en
dc.identifier.pmid28382949en
dc.identifier.urihttp://hdl.handle.net/10919/86648en
dc.identifier.volume7en
dc.language.isoenen
dc.publisherSpringer Natureen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectthermal-stabilityen
dc.subjectmetal/semiconductor superlatticesen
dc.subjectbarrieren
dc.subjectaluminumen
dc.subjectcoresen
dc.subjectfilmsen
dc.subjecttinen
dc.titleDislocation-pipe diffusion in nitride superlattices observed in direct atomic resolutionen
dc.title.serialScientific Reportsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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