Light-current characteristic of a quantum well laser with asymmetric barrier layers

dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributorSt. Petersburg Academic Universityen
dc.contributorIoffe Physico-Technical Instituteen
dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorKryzhanovskaya, Natalia V.en
dc.contributor.authorMaximov, Mikhail V.en
dc.contributor.authorZubov, Fedor I.en
dc.contributor.authorZhukov, Alexey E.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:32Zen
dc.date.available2015-05-21T19:47:32Zen
dc.date.issued2013-10-14en
dc.description.abstractLight-current characteristic (LCC) of a novel type of quantum well (QW) lasers-QW lasers with asymmetric barrier layers (ABLs)-is studied. The ABLs (one on each side of the QW) prevent electrons from entering the hole-injecting side of the structure and holes from entering the electron-injecting side. The use of ABLs thus suppresses the parasitic electron-hole recombination outside the QW and eliminates the mechanism of sublinearity of the LCC in conventional lasers associated with this recombination and with the carrier capture delay into the QW. As a result, no matter how slow is the carrier capture into the QW, the LCC of an ABL QW laser is virtually linear. In an ABL laser containing indent layers between the QW and each of the ABLs (parasitic recombination still occurs in these thin layers), even in the case of slow capture of carriers into the QW, the LCC is also considerably more linear than in a reference conventional QW laser. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipRussia (Federation). Ministry of Education and Science - Agreement No. 8518en
dc.format.extent7 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAsryan, Levon V., Kryzhanovskaya, Natalia V., Maximov, Mikhail V., Zubov, Fedor I., Zhukov, Alexey E. (2013). Light-current characteristic of a quantum well laser with asymmetric barrier layers. Journal of Applied Physics, 114(14). doi: 10.1063/1.4824545en
dc.identifier.doihttps://doi.org/10.1063/1.4824545en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52492en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/114/14/10.1063/1.4824545en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectQuantum wellsen
dc.subjectCurrent densityen
dc.subjectElectron hole recombinationen
dc.subjectQuantum dotsen
dc.subjectLaser efficiencyen
dc.titleLight-current characteristic of a quantum well laser with asymmetric barrier layersen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
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