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Growth, strain relaxation properties and high-kappa dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL)en
dc.contributor.authorZhu, Yizhengen
dc.contributor.authorClavel, M.en
dc.contributor.authorGoley, Patrick S.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T16:58:30Zen
dc.date.available2015-05-04T16:58:30Zen
dc.date.issued2014-10-17en
dc.description.abstractMixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-kappa dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of > 2 eV for all three dielectric materials on GaAs0.38Sb0.62, indicating the potential of utilizing these dielectrics on GaAs0.38Sb0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al2O3 and HfO2 showed a conduction band offset of > 2 eV on GaAs0.38Sb0.62, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs1-ySby material systems and the detailed band alignment analysis of multiple high-kappa dielectric materials on a fixed Sb composition, GaAs0.38Sb0.62, provides a pathway to utilize GaAs1-ySby materials in future microelectronic and optoelectronic applications. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation - Grant No. ECCS-1028494en
dc.description.sponsorshipIntel Corporationen
dc.description.sponsorshipNational Science Foundation. Graduate Research Fellowship - Grant No. DGE 0822220en
dc.format.extent10 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZhu, Y., Clavel, M., Goley, P. & Hudait, M. K. (2014). Growth, strain relaxation properties and high-kappa dielectric integration of mixed-anion GaAs1-ySby metamorphic materials. Journal of Applied Physics, 116(13). doi: 10.1063/1.4896880en
dc.identifier.doihttps://doi.org/10.1063/1.4896880en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51970en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/116/13/10.1063/1.4896880en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectIII-V semiconductorsen
dc.subjectTantalumen
dc.subjectDielectric materialsen
dc.subjectAntimonyen
dc.subjectOzoneen
dc.titleGrowth, strain relaxation properties and high-kappa dielectric integration of mixed-anion GaAs1-ySby metamorphic materialsen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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