Oriented growth of SrBi2Ta2O9 ferroelectric thin films

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dc.contributorVirginia Techen
dc.contributor.authorDesu, Seshu B.en
dc.contributor.authorVijay, Dilip P.en
dc.contributor.authorZhang, X.en
dc.contributor.authorHe, B. P.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:45Zen
dc.date.available2014-04-16T14:16:45Zen
dc.date.issued1996-09-01en
dc.description.abstractWe report on the ferroelectric properties of c-axis oriented ferroelectric SrBi2Ta2O9 thin films. Pt/SrBi2Ta2O9/Pt capacitors were grown on single crystal MgO (and/or SrTiO3) substrates using pulsed laser ablation. These substrates provide the necessary template for (100) texture in platinum due to their close lattice matching. This in turn facilitates the c-axis orientation in the ferroelectric films. The degree of orientation in the layered structure ferroelectric film was systematically varied from highly c-axis oriented to random polycrystalline by varying the growth conditions of the bottom metal electrode. The polarization and coercive field values were found to decrease with an increasing degree of c-axis orientation; while the randomly oriented films exhibited a remnant polarization of 5 mu C/cm(2), a coercive field of 70 kV/cm, and a dielectric constant of 320, the c-axis oriented films exhibited very low polarization (similar to 1 mu C/cm(2)), coercivity (22 kV/cm), and dielectric constant (similar to 200) values. (C) 1996 American Institute of Physics.en
dc.description.sponsorshipSharp Corporation Japanen
dc.description.sponsorshipCERAM-VAen
dc.description.sponsorshipCIT-VAen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDesu, SB; Vijay, DP; Zhang, X; et al., "Oriented growth of SrBi2Ta2O9 ferroelectric thin films," Appl. Phys. Lett. 69, 1719 (1996); http://dx.doi.org/10.1063/1.118008en
dc.identifier.doihttps://doi.org/10.1063/1.118008en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47399en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/69/12/10.1063/1.118008en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectFerroelectric thin filmsen
dc.subjectThin film growthen
dc.subjectCoercive forceen
dc.subjectPolarizationen
dc.subjectThin filmsen
dc.titleOriented growth of SrBi2Ta2O9 ferroelectric thin filmsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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