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Magnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layer

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorViehland, Dwight D.en
dc.contributor.inventorDong, Shuxiangen
dc.contributor.inventorLi, Jie-Fangen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:54:33Zen
dc.date.available2016-08-24T17:54:33Zen
dc.date.filed2003-10-20en
dc.date.issued2006-04-04en
dc.description.abstractA magnetoelectric magnetic field sensor has one or more laminated magnetostrictive layers and piezoelectric layers. The magnetostrictive layers are magnetized by a bias magnetic field in a longitudinal, in-plane direction. The piezoelectric layers can be poled in the longitudinal direction or perpendicular direction. The longitudinal magnetization of the magnetostrictive layers provides greatly increased sensitivity at lower bias fields compared to other magnetoelectric sensors. Perpendicular poling of the piezoelectric layers tends to provide higher sensitivity at lower detection frequency (e.g. less than 1 Hz). Longitudinal poling tends to provide higher sensitivity at high detection frequency (e.g. above 10 Hz). Also included are embodiments having relative thicknesses for the magnetostrictive layers that are optimized for sensitivity. Equations are provided for calculating the best relative thickness for the magnetostrictive layer for maximum sensitivity.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber10687970en
dc.identifier.patentnumber7023206en
dc.identifier.urihttp://hdl.handle.net/10919/72523en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/06/232/070/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcG01R33/02en
dc.subject.cpcH01L41/00en
dc.subject.uspc324/249en
dc.subject.uspcother324/244en
dc.titleMagnetoelectric magnetic field sensor with longitudinally biased magnetostrictive layeren
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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