Metalorganic chemical vapor deposition of layered structure oxides

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dc.contributor.assigneeCedraeus Incorporateden
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorLi, Tingkaien
dc.contributor.inventorTao, Weien
dc.contributor.inventorPeng, Chien Hsiungen
dc.contributor.inventorZhu, Yongfeien
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:47Zen
dc.date.available2016-08-24T17:53:47Zen
dc.date.filed1995-05-30en
dc.date.issued1996-06-18en
dc.description.abstractA method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8454029en
dc.identifier.patentnumber5527567en
dc.identifier.urihttp://hdl.handle.net/10919/72317en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/67/275/055/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcC23C16/40en
dc.subject.cpcH01L21/31122en
dc.subject.cpcH01L21/31691en
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dc.titleMetalorganic chemical vapor deposition of layered structure oxidesen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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