Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin films

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dc.contributor.authorLi, Linglongen
dc.contributor.authorLu, Luen
dc.contributor.authorWang, Zhiguangen
dc.contributor.authorLi, Yanxien
dc.contributor.authorYao, Yonggangen
dc.contributor.authorZhang, Daweien
dc.contributor.authorYang, Guangen
dc.contributor.authorYao, Jianjunen
dc.contributor.authorViehland, Dwight D.en
dc.contributor.authorYang, Yaodongen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessioned2019-01-28T17:56:17Zen
dc.date.available2019-01-28T17:56:17Zen
dc.date.issued2015-03-18en
dc.description.abstractDynamic oxygen vacancies play a significant role in memristive switching materials and memristors can be realized via well controlled doping. Based on this idea we deposite Nb2O5-NaNbO3 nanocomposite thin films on SrRuO3-buffered LaAlO3 substrates. Through the spontaneous phase separation and self-assembly growth, two phases form clear vertical heteroepitaxial nanostructures. The interfaces between niobium oxide and sodium niobate full of ion vacancies form the conductive channels. Alternative I-V behavior attributed to dynamic ion migration reveals the memristive switching mechanism under the external bias. We believe that this phenomenon has a great potential in future device applications.en
dc.description.notesThe authors gratefully acknowledge Miss. Yajing Shen for the helpful discussion. This work was supported by the Ministry of Science and Technology of China through a 973-Project under Grant No. 2012CB619401, National Natural Science Foundation of China (Grant No. 11204233), the fundamental research funds for the central universities and the scientific research foundation for the returned overseas Chinese scholars, Ministry of Education.en
dc.description.sponsorshipMinistry of Science and Technology of China through a 973-Project [2012CB619401]; National Natural Science Foundation of China [11204233]; fundamental research funds for the central universities; scientific research foundation for the returned overseas Chinese scholars, Ministry of Educationen
dc.format.extent7en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/srep09229en
dc.identifier.issn2045-2322en
dc.identifier.other9229en
dc.identifier.pmid25784511en
dc.identifier.urihttp://hdl.handle.net/10919/87055en
dc.identifier.volume5en
dc.language.isoen_USen
dc.publisherSpringer Natureen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectmemory devicesen
dc.subjectnanodevicesen
dc.subjectresistanceen
dc.titleAnatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb2O5-NaNbO3 thin filmsen
dc.title.serialScientific Reportsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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