Stress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibers

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dc.contributorVirginia Techen
dc.contributor.authorTsai, Tsung-Einen
dc.contributor.authorTaunay, Thierryen
dc.contributor.authorFriebele, E. Josephen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentFiber & ElectroOptics Research Center (FEORC)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:47Zen
dc.date.available2014-04-16T14:16:47Zen
dc.date.issued1999-10-01en
dc.description.abstractThe evolution of the index change of type-IIa gratings observed in 28 mol % Ge-SiO2 core fibers with 1.8 mu m core diameter under various strains was measured from the optical spectra, and the induced defects at high and low strains were studied with electron spin resonance. Data will be presented to show that the index modulation (Delta n(mod)) of type-IIa gratings is likely associated with Ge E-' centers. (C) 1999 American Institute of Physics. [S0003-6951(99)04141-8].en
dc.description.sponsorshipOffice of Naval Researchen
dc.description.sponsorshipNational Science Foundation under Grant No. ECS-9530329en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTsai, TE; Taunay, T; Friebele, EJ, "Stress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibers," Appl. Phys. Lett. 75, 2178 (1999); http://dx.doi.org/10.1063/1.124957en
dc.identifier.doihttps://doi.org/10.1063/1.124957en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47410en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/75/15/10.1063/1.124957en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectOptical fibersen
dc.subjectBragg gratingsen
dc.subjectGermanosilicate fibersen
dc.subjectGe-SiO2 fibersen
dc.subjectExcimer-laseren
dc.subjectPhotosensitivityen
dc.titleStress-dependent growth kinetics of ultraviolet-induced refractive index change and defect centers in highly Ge-doped SiO2 core fibersen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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