Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition

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dc.contributorVirginia Techen
dc.contributor.authorDesu, Seshu B.en
dc.contributor.authorCho, H. S.en
dc.contributor.authorJoshi, Pooran C.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:42Zen
dc.date.available2014-04-16T14:16:42Zen
dc.date.issued1997-03-01en
dc.description.abstractWe report the successful deposition of highly c-axis oriented CaBi2Nb2O9 (CBN) thin films directly on p-type Si(100) substrates by pulsed laser deposition. The CBN thin films exhibited good structural, dielectric, and CBN/Si interface characteristics. The electrical measurements were conducted on CBN thin films in a metal-ferroelectric-semiconductor (MFS) capacitor configuration. The typical measured small signal dielectric constant and the dissipation factor at a frequency of 100 kHz were 80 and 0.051, respectively. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10(-7)A/cm(2) at an applied electric field of 100 kV/cm. The capacitance-voltage measurements on MFS capacitors established good ferroelectric polarization switching characteristics. (C) 1997 American Institute of Physics.en
dc.description.sponsorshipKorea Science and Engineering Foundationen
dc.description.sponsorshipSHARP Corp., Japanen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDesu, SB; Cho, HS; Joshi, PC, "Highly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser deposition," Appl. Phys. Lett. 70, 1393 (1997); http://dx.doi.org/10.1063/1.118587en
dc.identifier.doihttps://doi.org/10.1063/1.118587en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47382en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/70/11/10.1063/1.118587en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectThin film depositionen
dc.subjectPulsed laser depositionen
dc.subjectCapacitorsen
dc.subjectFerroelectric thin filmsen
dc.subjectDielectric thin filmsen
dc.titleHighly oriented ferroelectric CaBi2Nb2O9 thin films deposited on Si(100) by pulsed laser depositionen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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