Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices

dc.contributor.assignee	Virginia Polytechnic Institute and State University	en
dc.contributor.inventor	Desu, Seshu B.	en
dc.contributor.inventor	Peng, Chia-Tien Shian	en
dc.contributor.inventor	Si, Jie	en
dc.date.accessed	2016-08-19	en
dc.date.accessioned	2016-08-24T17:53:51Z	en
dc.date.available	2016-08-24T17:53:51Z	en
dc.date.filed	1995-07-12	en
dc.date.issued	1997-04-29	en
dc.description.abstract	A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.	en
dc.format.mimetype	application/pdf	en
dc.identifier.applicationnumber	8501283	en
dc.identifier.patentnumber	5625587	en
dc.identifier.uri	http://hdl.handle.net/10919/72337	en
dc.identifier.url	http://pimg-fpiw.uspto.gov/fdd/87/255/056/0.pdf	en
dc.language.iso	en_US	en
dc.publisher	United States Patent and Trademark Office	en
dc.subject.cpc	H01L27/11502	en
dc.subject.cpc	H01L29/516	en
dc.subject.uspc	257/E27.104	en
dc.subject.uspcother	257/E29.164	en
dc.subject.uspcother	365/145	en
dc.subject.uspcother	427/124	en
dc.subject.uspcother	427/419.1	en
dc.title	Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices	en
dc.type	Patent	en
dc.type.dcmitype	Text	en
dc.type.patenttype	utility	en

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