Method and apparatus for emission lithography using patterned emitter

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dc.contributor.assigneeSAMSUNG ELECTRONICS CO., LTD.en
dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorYoo, In-kyeongen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:54:26Zen
dc.date.available2016-08-24T17:54:26Zen
dc.date.filed2001-05-29en
dc.date.issued2004-05-25en
dc.description.abstractA method and apparatus for emission lithography using a patterned emitter wherein, in the apparatus for emission lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet, a direct current magnetic field generator or a deflection system, thereby achieving an exact one-to-one projection or an exact x-to-one projection of the desired pattern etched on the substrate.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber9865607en
dc.identifier.patentnumber6740895en
dc.identifier.urihttp://hdl.handle.net/10919/72491en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/95/408/067/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcB82Y10/00en
dc.subject.cpcB82Y40/00en
dc.subject.cpcH01J37/3175en
dc.subject.cpcH01J2237/31777en
dc.subject.uspc250/492.24en
dc.subject.uspcother250/492.2en
dc.titleMethod and apparatus for emission lithography using patterned emitteren
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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