10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 ◦C
| dc.contributor.author | Qin, Yuan | en |
| dc.contributor.author | Xiao, Ming | en |
| dc.contributor.author | Porter, Matthew | en |
| dc.contributor.author | Ma, Yunwei | en |
| dc.contributor.author | Spencer, Joseph | en |
| dc.contributor.author | Du, Zhonghao | en |
| dc.contributor.author | Jacobs, Alan G. | en |
| dc.contributor.author | Sasaki, Kohei | en |
| dc.contributor.author | Wang, Han | en |
| dc.contributor.author | Tadjer, Marko | en |
| dc.contributor.author | Zhang, Yuhao | en |
| dc.date.accessioned | 2024-04-08T14:36:05Z | en |
| dc.date.available | 2024-04-08T14:36:05Z | en |
| dc.date.issued | 2023-08 | en |
| dc.description.abstract | This work demonstrates a lateral Ga2O3 Schottky barrier diode (SBD) with a breakdown voltage (BV) over 10 kV, the highest BV reported in Ga2O3 devices to date. The 10 kV SBD shows good thermal stability up to 200◦C, which is among the highest operational temperatures reported in multi-kilovolt Ga2O3 devices. The key device design for achieving such high BV is a reduced surface field (RESURF) structure based on the p-type nickel oxide (NiO), which balances the depletion charges in the n-Ga2O3 channel at high voltage. At BV, the chargebalanced Ga2O3 SBD shows an average lateral electric field (E-field) over 4.7 MV/cm at 25 ◦C and over 3.5 MV/cm at 200◦C, both of which exceed the critical E-field of GaN and SiC. The 10 kV SBD shows a specific on-resistance of 0.27 ·cm2 and a turn-on voltage of 1 V; at 200◦C, the former doubles and the latter reduces to 0.7 V. These results suggest the good potential of Ga2O3 devices for mediumand high-voltage, high-temperature power applications. | en |
| dc.description.sponsorship | This work was supported in part by the National Science Foundation under Contract ECCS-2230412 and Contract ECCS-2100504 and in part by the Center for Power Electronics Systems Industry Consortium at Virginia Tech. | en |
| dc.description.version | Accepted version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.doi | https://doi.org/10.1109/LED.2023.3287887 | en |
| dc.identifier.issue | 8 | en |
| dc.identifier.uri | https://hdl.handle.net/10919/118509 | en |
| dc.identifier.volume | 44 | en |
| dc.language.iso | en | en |
| dc.publisher | IEEE | en |
| dc.rights | Creative Commons Attribution 4.0 International | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | en |
| dc.subject | Power electronics | en |
| dc.subject | ultra-wide bandgap | en |
| dc.subject | gallium oxide | en |
| dc.subject | Schottky diode | en |
| dc.subject | nickel oxide | en |
| dc.subject | RESURF | en |
| dc.subject | high voltage | en |
| dc.title | 10-kV Ga<sub>2</sub>O<sub>3</sub> Charge-Balance Schottky Rectifier Operational at 200 <sup>◦</sup>C | en |
| dc.title.serial | IEEE Electron Device Letters | en |
| dc.type | Article - Refereed | en |
| dc.type.dcmitype | Text | en |