Emitter turn-off thyristors (ETO)

dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.inventorHuang, Alex Q.en
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:54:30Zen
dc.date.available2016-08-24T17:54:30Zen
dc.date.filed1998-09-30en
dc.date.issued2005-08-23en
dc.description.abstractA family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of which is connected in series with the thyristor and a second which provides a negative feedback to the thyristor gate. A negative voltage applied to the gate of the first MOS transistor causes the thyristor to turn on to conduct high currents. A zero to positive voltage applied to the first MOS gate causes the thyristor to turn off. The negative feedback insures that the thyristor only operates at its breakover boundaries of the latching condition with the NPN transistor portion of the thyristor operating in the active region. Under this condition, the anode voltage V<sub>A </sub>continues to increase without significant anode current increase. Emitter turn-off (ETO) thyristor fabrication packages are also disclosed having packaged semiconductor devices controlling the thyristor.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber9486779en
dc.identifier.patentnumber6933541en
dc.identifier.urihttp://hdl.handle.net/10919/72510en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/41/335/069/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L24/72en
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dc.titleEmitter turn-off thyristors (ETO)en
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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