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Semiconductor module arrangement

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentCenter for Power Electronics Systemsen
dc.contributor.inventorDiMarino, Christinaen
dc.contributor.inventorBoroyevich, Dushanen
dc.contributor.inventorBurgos, Rolandoen
dc.contributor.inventorJohnson, Marken
dc.date.accessed2019-02-15en
dc.date.accessioned2019-02-26T22:24:03Zen
dc.date.available2019-02-26T22:24:03Zen
dc.date.filed2017-05-03en
dc.date.issued2018-07-24en
dc.description.abstractIn a switching module structure that includes a low-impedance path to ground, such as a parasitic capacitance of an insulating substrate, a further insulating substrate presenting a parasitic capacitance placed in series with the low impedance current path and a connection of a conductive layer to input voltage rails using a single decoupling capacitor or, preferably, a midpoint of the voltage rails formed by a series connection of decoupling capacitors maintains a large portion of common mode (CM) currents which are due to high dV/dt slew rates of SiC and GaN transistors within the switching module.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber15585545en
dc.identifier.patentnumber10032732en
dc.identifier.urihttp://hdl.handle.net/10919/87843en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/32/327/100/0.pdfen
dc.language.isoenen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L23/66en
dc.subject.cpcH01L23/481en
dc.subject.cpcH01L25/0652en
dc.subject.cpcH01L25/0657en
dc.subject.cpcH01L2224/1134en
dc.subject.cpcH05K1/167en
dc.subject.cpcH05K3/4614en
dc.titleSemiconductor module arrangementen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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