Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

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dc.contributorBradley Department of Electrical and Computer Engineeringen
dc.contributorPenn State. Electrical Engineeringen
dc.contributorIQE Inc.en
dc.contributor.authorZhu, Yizhengen
dc.contributor.authorJain, Nikhilen
dc.contributor.authorMohata, Dheeraj K.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorLubyshev, Dmitrien
dc.contributor.authorFastenau, Joel M.en
dc.contributor.authorLiu, Amy K.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T16:58:31Zen
dc.date.available2015-05-04T16:58:31Zen
dc.date.issued2013-01-14en
dc.description.abstractThe experimental study of the valence band offset (Delta E-v) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a Delta E-v of 0.39 +/- 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be similar to 0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775606]en
dc.description.sponsorshipNational Science Foundation - Grant No. ECCS-1028494en
dc.description.sponsorshipIntel Corporationen
dc.format.extent6 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZhu, Y., Jain, N., Mohata, D. K., Datta, S., Lubyshev, D., Fastenau, J. M., Liu, A. K., Hudait, M. K. (2013). Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application. Journal of Applied Physics, 113(2). doi: 10.1063/1.4775606en
dc.identifier.doihttps://doi.org/10.1063/1.4775606en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51976en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4775606en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectIII-V semiconductorsen
dc.subjectValence bandsen
dc.subjectX-ray photoelectron spectroscopyen
dc.subjectHeterojunctionsen
dc.subjectSemiconductor insulator semiconductor structuresen
dc.titleBand offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor applicationen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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