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Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films

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dc.contributorVirginia Techen
dc.contributor.authorLi, T. K.en
dc.contributor.authorZhu, Y. F.en
dc.contributor.authorDesu, Seshu B.en
dc.contributor.authorPeng, C. H.en
dc.contributor.authorNagata, M.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:44Zen
dc.date.available2014-04-16T14:16:44Zen
dc.date.issued1996-01-01en
dc.description.abstractFerroelectric layered-oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single-crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack-free and showed complete crystallization at temperatures between 650 and 700 degrees C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2P(r) and E(c) were about 8.3 mu C/cm(2) and 60 kV/cm, respectively. The leakage currents were as low as 8 X 10(-9) A/cm(2) at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 X 10(10) switching cycles. These high quality MOCVD films make high-intensity (>1 Mbit) nonvolatile memory devices possible. (C) 1996 American Institute of Physics.en
dc.description.sponsorshipSharp Corporation Japanen
dc.description.sponsorshipCERAM, Inc. of COen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLi, TK; Zhu, YF; Desu, SB; et al., "Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films," Appl. Phys. Lett. 68, 616 (1996); http://dx.doi.org/10.1063/1.116486en
dc.identifier.doihttps://doi.org/10.1063/1.116486en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47393en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/68/5/10.1063/1.116486en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectFerroelectric thin filmsen
dc.subjectMetal organic chemical vapor depositionen
dc.subjectMetallic thin filmsen
dc.subjectFerroelectric materialsen
dc.subjectThin film depositionen
dc.titleMetalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin filmsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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