Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction

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dc.contributor.assigneeCedraeus Incorporateden
dc.contributor.assigneeVirginia Polytechnic Institute and State Universityen
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorYoo, In Kyungen
dc.contributor.inventorKwok, Chi Kongen
dc.contributor.inventorVijay, Dilip P.en
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:44Zen
dc.date.available2016-08-24T17:53:44Zen
dc.date.filed1993-08-10en
dc.date.issued1996-02-13en
dc.description.abstractA ferroelectric device is constructed using a bottom electrode composed of a conducting oxide such as RuO.sub.x, on a substrate such as silicon or silicon dioxide. A ferroelectric material such as lead zirconate titanate (PZT) is deposited on the bottom electrode, and a conducting interlayer is formed at the interface between the ferroelectric and the electrode. This interlayer is created by reaction between the materials of the ferroelectric and electrode, and in this case would be Pb.sub.2 Ru.sub.2 O.sub.7-x. A conductive top layer is deposited over the ferroelectric. This top layer may be a metal, or it may be the same type of materials as the bottom electrode, in which case another interlayer can be formed at the interface. A device constructed in this manner has the property of lower degradation due to fatigue, breakdown, and aging.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8104861en
dc.identifier.patentnumber5491102en
dc.identifier.urihttp://hdl.handle.net/10919/72306en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/02/911/054/0.pdfen
dc.language.isoenen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcG11C11/22en
dc.subject.cpcH01L27/11502en
dc.subject.cpcH01L27/11507en
dc.subject.cpcH01L28/55en
dc.subject.cpcH01L28/65en
dc.subject.cpcH01L28/75en
dc.subject.cpcH01L27/1085en
dc.subject.uspc257/E21.009en
dc.subject.uspcother257/E21.021en
dc.subject.uspcother257/E21.647en
dc.subject.uspcother257/E21.664en
dc.subject.uspcother427/79en
dc.subject.uspcother438/3en
dc.titleMethod of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reactionen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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