Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

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dc.contributorVirginia Techen
dc.contributor.authorAli, A.en
dc.contributor.authorMadan, H. S.en
dc.contributor.authorKirk, A. P.en
dc.contributor.authorZhao, D. A.en
dc.contributor.authorMourey, D. A.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorWallace, R. M.en
dc.contributor.authorJackson, T. N.en
dc.contributor.authorBennett, B. R.en
dc.contributor.authorBoos, J. B.en
dc.contributor.authorDatta, Sumanen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-01-17en
dc.date.accessioned2014-01-28T18:00:13Zen
dc.date.available2014-01-28T18:00:13Zen
dc.date.issued2010-10-01en
dc.description.abstractN-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3/GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (D-it) whereas the PEALD Al2O3/GaSb MOSCAPs show unpinned C-V characteristics (low D-it). The reduction in Sb2O3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2O3/GaSb interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492847]en
dc.description.sponsorshipSRCen
dc.description.sponsorshipDARPAen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAli, A.; Madan, H. S.; Kirk, A. P.; et al., "Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3," Appl. Phys. Lett. 97, 143502 (2010); http://dx.doi.org/10.1063/1.3492847en
dc.identifier.doihttps://doi.org/10.1063/1.3492847en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25171en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/97/14/10.1063/1.3492847en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectIn-situen
dc.subjectSubstrateen
dc.subjectPhysicsen
dc.titleFermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3en
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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