Compositional depth profiles of chemiplated Cu2S/(Zn,Cd)S heterojunction solar cells

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dc.contributorVirginia Tech. Electrical Engineering Departmenten
dc.contributorVirginia Tech. Department of Materials Engineeringen
dc.contributorUniversity of Illinois at Urbana-Champaign. Department of Metallurgy. Coordinated Science Laboratory and the Materials Research Laboratoryen
dc.contributor.authorUppal, P. N.en
dc.contributor.authorBurton, Larry C.en
dc.contributor.authorRivaud, Lydiaen
dc.contributor.authorGreene, J. E.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T19:24:42Zen
dc.date.available2015-05-04T19:24:42Zen
dc.date.issued1983en
dc.description.abstractAtomic absorption spectroscopy combined with controlled chemical etching and Auger electron spectroscopy profiling with ion beametching have been used to obtain composition versus depth analyses of Cu2S/(Zn,Cd)S heterojunctionsolar cells formed by an aqueous cation exchange, or chemiplating, process. The Cu2S films, ranging from 0.5 to 6 _m in thickness, were polycrystalline and exhibited a (001) preferred orientation on either textured polycrystalline or cleaved single crystal (Zn,Cd)S substrates. The profiling results showed that the interfacial regions were compositionally graded over very large distances ranging from tens to hundreds of nonometers depending on the Cu2S film thickness. This is much wider than observed for comparable Cu2S/CdS cells. Moreover, excess Zn in the form of both elemental Zn and ZnS was always found in the interfacial region and may be responsible for the short circuit current being lower than expected for these cells.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationUppal, P. N., Burton, L. C., Rivaud, L., Greene, J. E. (1983). COMPOSITIONAL DEPTH PROFILES OF CHEMIPLATED CU2S/(ZN,CD)S HETEROJUNCTION SOLAR-CELLS. Journal of Applied Physics, 54(2), 982-986. doi: 10.1063/1.332024en
dc.identifier.doihttps://doi.org/10.1063/1.332024en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51987en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/54/2/10.1063/1.332024en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectCopperen
dc.subjectEtchingen
dc.subjectHeterojunctionsen
dc.subjectPolycrystalsen
dc.subjectSolar cellsen
dc.titleCompositional depth profiles of chemiplated Cu2S/(Zn,Cd)S heterojunction solar cellsen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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