Piezoelectric properties of epitaxial Pb(Zr-0.525, Ti-0.475)O-3 films on amorphous magnetic metal substrates

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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributorNortheastern University. Center for Microwave Magnetic Materials and Integrated Circuitsen
dc.contributorNortheastern University. Department of Electrical and Computer Engineeringen
dc.contributorSoochow University. Department of Physics. Jiangsu Key Laboratory of Thin Filmsen
dc.contributor.authorHu, Bolinen
dc.contributor.authorChen, Yajieen
dc.contributor.authorYang, Aria F.en
dc.contributor.authorGillette, Scott M.en
dc.contributor.authorFitchorov, Trifonen
dc.contributor.authorGeiler, Anton L.en
dc.contributor.authorDaigle, Andrewen
dc.contributor.authorSu, X. D.en
dc.contributor.authorWang, Zhiguangen
dc.contributor.authorViehland, Dwight D.en
dc.contributor.authorVittoria, Carmineen
dc.contributor.authorHarris, Vincent G.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:32Zen
dc.date.available2015-05-21T19:47:32Zen
dc.date.issued2012-04-01en
dc.description.abstractEpitaxial growth of high piezoelectric constant Pb(Zr-0.525, Ti-0.475)O-3 (PZT) thin films deposited on amorphous magnetic Metglas (R) substrates by pulsed laser deposition (PLD) is reported. Particularly, Pt or Au buffer layers were employed to initiate epitaxial growth of the PZT films from atop of an amorphous surface. The optimization of deposition conditions for the PZT films with different buffer layers was systematically investigated. The crystal structure, texturing, and surface morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Ferroelectric and piezoelectric properties were measured indicating high polarization 27 mu C/cm(2) and piezoelectric constant d(33), 46 pm/V for the Pt buffered films. The PZT thin films grown on a magnetostrictive material have demonstrated high quality crystallographic structure and piezoelectric response, having potential for use in emerging magnetoelectric sensors. (C) 2012 American Institute of Physics. [doi:10.1063/1.3677864]en
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agencyen
dc.format.extent4 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHu, B., Chen, Y., Yang, A., Gillete, S., Fitchorov, Trifon, Geiler, A., Daigle, A., Su, X. D., Wang, Z., Viehland, D., Vittoria, C., Harris, V. G. (2012). Piezoelectric properties of epitaxial Pb(Zr-0.525, Ti-0.475)O-3 films on amorphous magnetic metal substrates. Journal of Applied Physics, 111(7). doi: 10.1063/1.3677864en
dc.identifier.doihttps://doi.org/10.1063/1.3677864en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52484en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/111/7/10.1063/1.3677864en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectGolden
dc.subjectPZT filmsen
dc.subjectPiezoelectric transducersen
dc.subjectThin film growthen
dc.subjectBuffer layersen
dc.titlePiezoelectric properties of epitaxial Pb(Zr-0.525, Ti-0.475)O-3 films on amorphous magnetic metal substratesen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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