High temperature electrode-barriers for ferroelectric and other capacitor structures

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorVijay, Dilip P.en
dc.contributor.inventorBhatt, Hemanshu D.en
dc.contributor.inventorHwang, Yoo-Sangen
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:57Zen
dc.date.available2016-08-24T17:53:57Zen
dc.date.filed1996-12-06en
dc.date.issued1998-08-04en
dc.description.abstractA capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8763011en
dc.identifier.patentnumber5790366en
dc.identifier.urihttp://hdl.handle.net/10919/72361en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/66/903/057/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L28/60en
dc.subject.uspc257/295en
dc.subject.uspcother257/306en
dc.subject.uspcother257/E21.011en
dc.subject.uspcother361/305en
dc.subject.uspcother361/311en
dc.subject.uspcother361/313en
dc.subject.uspcother361/322en
dc.titleHigh temperature electrode-barriers for ferroelectric and other capacitor structuresen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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