Epitaxially induced high temperature (> 900 K) cubic-tetragonal structural phase transition in BaTiO3 thin films

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dc.contributorVirginia Techen
dc.contributor.authorBai, Feimingen
dc.contributor.authorZheng, H. M.en
dc.contributor.authorCao, Huen
dc.contributor.authorCross, L. E.en
dc.contributor.authorRamesh, R.en
dc.contributor.authorLi, Jiefangen
dc.contributor.authorViehland, Dwight D.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-01-24en
dc.date.accessioned2014-02-03T15:57:15Zen
dc.date.available2014-02-03T15:57:15Zen
dc.date.issued2004-11-01en
dc.description.abstractFor (001)(c) oriented BaTiO3 thin films, it has been found that epitaxial constraint can result in a dramatic increase in the temperature of a tetragonal (T) structural phase transition. For 2000-Angstrom-thick films grown directly on SrTiO3 substrates, a T-->cubic (C) phase transition was found on heating at >950 K, where the lattice constant changed smoothly with temperature. It was also found for films of the same thickness that the T-->C transition is nearly restored to that of bulk crystals by the use of a buffer layer, which relaxes the epitaxial constraint. These results provide evidence of an epitaxially induced high temperature structural phase transition in BaTiO3 thin films, where the ferroelectric (internal) and structural (external) aspects of the phase transition are decoupled. (C) 2004 American Institute of Physics.en
dc.description.sponsorshipOffice of Naval Research (ONR) MURI N000140110761, N000140210340, N000140210126en
dc.description.sponsorshipNSF-MRSEC DMR-00-80008en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBai, FM; Zheng, HM; Cao, H; et al., "Epitaxially induced high temperature (> 900 K) cubic-tetragonal structural phase transition in BaTiO3 thin films," Appl. Phys. Lett. 85, 4109 (2004); http://dx.doi.org/10.1063/1.1812579en
dc.identifier.doihttps://doi.org/10.1063/1.1812579en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25252en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/85/18/10.1063/1.1812579en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectPhysicsen
dc.titleEpitaxially induced high temperature (> 900 K) cubic-tetragonal structural phase transition in BaTiO3 thin filmsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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