Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineering. Advanced Devices & Sustainable Energy Laboratory (ADSEL)en
dc.contributorVirginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributorUniversity of Bridgeport. Department of Biomedical Engineering and Department of Mechanical Engineeringen
dc.contributorUniversity of Connecticut. Department of Chemical and Biomolecular Engineering and Institute of Materials Scienceen
dc.contributorUniversity of Bridgeport. Department of Electrical and Computer Engineeringen
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorZhu, Yizhengen
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorPriya, Shashanken
dc.contributor.authorPatra, Prabir K.en
dc.contributor.authorMa, Anson W. K.en
dc.contributor.authorAphale, Ashishen
dc.contributor.authorMacwan, Isaacen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T16:58:30Zen
dc.date.available2015-05-04T16:58:30Zen
dc.date.issued2013-04-07en
dc.description.abstractStructural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, Delta E-v, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in Delta E-v related to the crystallographic orientation were Delta E-V(110)Ge > Delta E-V(100) Ge >= Delta E-V(111)Ge and the conduction band offset, Delta E-c, related to the crystallographic orientation was Delta E-c(111)Ge > Delta E-c(110)Ge > Delta E-c(100)Ge using the measured Delta E-v, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799367]en
dc.format.extent9 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHudait, M. K., Zhu, Y., Maurya, D., Priya, S., Patra, P. K., Ma, A. W. K., Aphale, A., Macwan, I. (2013). Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. Journal of Applied Physics, 113(13). doi: 10.1063/1.4799367en
dc.identifier.doihttps://doi.org/10.1063/1.4799367en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51973en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/113/13/10.1063/1.4799367en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectGermaniumen
dc.subjectOzoneen
dc.subjectElemental semiconductorsen
dc.subjectEpitaxyen
dc.subjectIII-V semiconductorsen
dc.titleStructural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxyen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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