Enhanced domain contribution to ferroelectric properties in freestanding thick films

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dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributorKorea Institute of Materials Science (KIMS). Functional Ceramics Departmenten
dc.contributorPusan-Susan-Taehak. Division of Materials Science and Engineeringen
dc.contributor.authorRyu, Junghoen
dc.contributor.authorPriya, Shashanken
dc.contributor.authorPark, Chee-Sungen
dc.contributor.authorKim, Kun-Youngen
dc.contributor.authorChoi, Jong-Jinen
dc.contributor.authorHahn, Byung-Dongen
dc.contributor.authorYoon, Woon-Haen
dc.contributor.authorLee, Byoung-Kuken
dc.contributor.authorPark, Dong-Sooen
dc.contributor.authorPark, Chanen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:30Zen
dc.date.available2015-05-21T19:47:30Zen
dc.date.issued2009-07-15en
dc.description.abstractWe report the success in fabricating clamped, "island," and freestanding 10 mu m thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/SiO(2)/Si) substrate and crystallization was conducted by annealing at 700 degrees C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3181058]en
dc.description.sponsorshipKorea (South). Ministry of Knowledge Economy. Component-Material Development Programen
dc.description.sponsorshipUnited States. Department of Energy. Office of Basic Energy Sciencesen
dc.format.extent5 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRyu, Jungho, Priya, Shashank, Park, Chee-Sung, Kim, Kun-Young, Choi, Jong-Jin, Hahn, Byung-Dong, Yoon, Woon-Ha, Lee, Byoung-Kuk, Park, Dong-Soo, Park, Chan (2009). Enhanced domain contribution to ferroelectric properties in freestanding thick films. Journal of Applied Physics, 106(2). doi: 10.1063/1.3181058en
dc.identifier.doihttps://doi.org/10.1063/1.3181058en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52475en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/106/2/10.1063/1.3181058en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectThin filmsen
dc.subjectDielectric thin filmsen
dc.subjectFerroelectric thin filmsen
dc.subjectThin film structureen
dc.subjectDomain wallsen
dc.titleEnhanced domain contribution to ferroelectric properties in freestanding thick filmsen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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