Laser-assisted low temperature processing of Pb(Zr, Ti)O-3 thin film
dc.contributor | Virginia Tech | en |
dc.contributor.author | Zhu, Y. F. | en |
dc.contributor.author | Zhu, J. S. | en |
dc.contributor.author | Song, Yoon J. | en |
dc.contributor.author | Desu, Seshu B. | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.date.accessed | 2014-01-24 | en |
dc.date.accessioned | 2014-02-03T15:57:17Z | en |
dc.date.available | 2014-02-03T15:57:17Z | en |
dc.date.issued | 1998-10-01 | en |
dc.description.abstract | A method for lowering the processing temperature of PbZr1-xTixO3 films was developed utilizing a laser- assisted two- step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470-550 degrees C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)02640-0]. | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Zhu, YF; Zhu, JS; Song, YJ; et al., "Laser-assisted low temperature processing of Pb(Zr, Ti)O-3 thin film," Appl. Phys. Lett. 73, 1958 (1998); http://dx.doi.org/10.1063/1.122334 | en |
dc.identifier.doi | https://doi.org/10.1063/1.122334 | en |
dc.identifier.issn | 0003-6951 | en |
dc.identifier.uri | http://hdl.handle.net/10919/25262 | en |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/73/14/10.1063/1.122334 | en |
dc.language.iso | en_US | en |
dc.publisher | AIP Publishing | en |
dc.rights | In Copyright | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject | KRF excimer-laser | en |
dc.subject | Polycrystalline silicon | en |
dc.subject | Crystallization | en |
dc.subject | Physics | en |
dc.title | Laser-assisted low temperature processing of Pb(Zr, Ti)O-3 thin film | en |
dc.title.serial | Applied Physics Letters | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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