Simple method of fabricating ferroelectric capacitors

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dc.contributor.assigneeVirginia Tech Intellectual Properties, Inc.en
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorVijay, Dilip P.en
dc.contributor.inventorBhatt, Hemanshu D.en
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:53:58Zen
dc.date.available2016-08-24T17:53:58Zen
dc.date.filed1996-12-06en
dc.date.issued1998-09-15en
dc.description.abstractA ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8761804en
dc.identifier.patentnumber5807774en
dc.identifier.urihttp://hdl.handle.net/10919/72365en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/74/077/058/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L28/55en
dc.subject.cpcH01L28/60en
dc.subject.uspc257/E21.009en
dc.subject.uspcother257/E21.011en
dc.subject.uspcother438/240en
dc.subject.uspcother438/3en
dc.subject.uspcother438/393en
dc.subject.uspcother438/396en
dc.titleSimple method of fabricating ferroelectric capacitorsen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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