Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique

Simple item page
dc.contributorVirginia Techen
dc.contributor.authorJoshi, Pooran C.en
dc.contributor.authorRyu, S. O.en
dc.contributor.authorZhang, X.en
dc.contributor.authorDesu, Seshu B.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:46Zen
dc.date.available2014-04-16T14:16:46Zen
dc.date.issued1997-03-01en
dc.description.abstractPolycrystalline SrBi2Ti2O9 thin films having a layered-perovskite structure were fabricated by a modified metalorganic solution deposition technique using room temperature processed alkoxide-carboxylate precursor solution. It was possible to obtain a complete perovskite phase at an annealing temperature of 650 degrees C and no pyrochlore phase was observed even up to 600 degrees C. In addition, the SrBi2Ta2O9 thin films annealed at 750 degrees C exhibited better structural, dielectric, and ferroelectric properties than those reported by previous techniques. The effects of postdeposition annealing on the structural, dielectric, and ferroelectric properties were analyzed. The electrical measurements were conducted on Pt/SrBi2Ta2O9/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 330 and 0.023 and the remanent polarization and the coercive field were 8.6 mu C/cm(2) and 23 kV/cm, respectively, for 0.25-mu m-thick films annealed at 750 degrees C. The leakage current density was lower than 10(-8) A/cm(2) at an applied electric Weld of 150 kV/cm. The films showed good switching endurance under bipolar stressing at least up to 10(10) switching cycles. (C) 1997 American Institute of Physics.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJoshi, PC; Ryu, SO; Zhang, X; et al., "Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique," Appl. Phys. Lett. 70, 1080 (1997); http://dx.doi.org/10.1063/1.118485en
dc.identifier.doihttps://doi.org/10.1063/1.118485en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47403en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/70/9/10.1063/1.118485en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectMemoriesen
dc.titleProperties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition techniqueen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
1.118485.pdf
Size:
292.28 KB
Format:
Adobe Portable Document Format
Description:
Main article
Download

Collections

Scholarly Works, Materials Science and Engineering (MSE)