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Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective

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dc.contributor.authorQin, Yuanen
dc.contributor.authorAlbano, Benjaminen
dc.contributor.authorSpencer, Josephen
dc.contributor.authorLundh, James Spenceren
dc.contributor.authorWang, Boyanen
dc.contributor.authorButtay, Cyrilen
dc.contributor.authorTadjer, Markoen
dc.contributor.authorDiMarino, Christinaen
dc.contributor.authorZhang, Yuhaoen
dc.date.accessioned2023-10-17T12:54:20Zen
dc.date.available2023-10-17T12:54:20Zen
dc.date.issued2023-03en
dc.description.abstractPower semiconductor devices are fundamental drivers for advances in power electronics, the technology for electric energy conversion. Power devices based on wide-bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors allow for a smaller chip size, lower loss and higher frequency compared with their silicon (Si) counterparts, thus enabling a higher system efficiency and smaller form factor. Amongst the challenges for the development and deployment of WBG and UWBG devices is the efficient dissipation of heat, an unavoidable by-product of the higher power density. To mitigate the performance limitations and reliability issues caused by self-heating, thermal management is required at both device and package levels. Packaging in particular is a crucial milestone for the development of any power device technology; WBG and UWBG devices have both reached this milestone recently. This paper provides a timely review of the thermal management of WBG and UWBG power devices with an emphasis on packaged devices. Additionally, emerging UWBG devices hold good promise for high-temperature applications due to their low intrinsic carrier density and increased dopant ionization at elevated temperatures. The fulfillment of this promise in system applications, in conjunction with overcoming the thermal limitations of some UWBG materials, requires new thermal management and packaging technologies. To this end, we provide perspectives on the relevant challenges, potential solutions and research opportunities, highlighting the pressing needs for device-package electrothermal co-design and high-temperature packages that can withstand the high electric fields expected in UWBG devices.en
dc.description.notesThis work at Virginia Tech was supported in part by the National Science Foundation under grants ECCS-2100504 and ECCS-2230412 and in part by the Center for Power Electronics Systems High Density Integration Industry Consortium.en
dc.description.sponsorshipNational Science Foundation [ECCS-2100504, ECCS-2230412]; Center for Power Electronics Systems High Density Integration Industry Consortiumen
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1088/1361-6463/acb4ffen
dc.identifier.eissn1361-6463en
dc.identifier.issn0022-3727en
dc.identifier.issue9en
dc.identifier.other93001en
dc.identifier.urihttp://hdl.handle.net/10919/116488en
dc.identifier.volume56en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectpower electronicsen
dc.subjectpower semiconductor devicesen
dc.subjectthermal managementen
dc.subjectpackagingen
dc.subjectco-designen
dc.subjectwide-bandgapen
dc.subjectultra-wide bandgapen
dc.titleThermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspectiveen
dc.title.serialJournal of Physics D-Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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