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Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas

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dc.contributor.assigneeCedraeus Incorporateden
dc.contributor.assigneeVirginia Polytechnic Institute and State Universityen
dc.contributor.assigneeSharp Kabushiki Kaishaen
dc.contributor.inventorDesu, Seshu B.en
dc.contributor.inventorPan, Weien
dc.date.accessed2016-08-19en
dc.date.accessioned2016-08-24T17:55:41Zen
dc.date.available2016-08-24T17:55:41Zen
dc.date.filed1993-07-22en
dc.date.issued1995-01-17en
dc.description.abstractA method of reactive ion etching both a lead zirconate titanate ferroelectric dielectric and a RuO.sub.2 electrode, and a semiconductor device produced in accordance with such process. The dielectric and electrode are etched in an etching gas of O.sub.2 mixed with either CHCl.sub.2 CF.sub.3 or CHClFCF.sub.3.en
dc.format.mimetypeapplication/pdfen
dc.identifier.applicationnumber8096171en
dc.identifier.patentnumber5382320en
dc.identifier.urihttp://hdl.handle.net/10919/72827en
dc.identifier.urlhttp://pimg-fpiw.uspto.gov/fdd/20/823/053/0.pdfen
dc.language.isoen_USen
dc.publisherUnited States Patent and Trademark Officeen
dc.subject.cpcH01L28/60en
dc.subject.cpcH01L21/31116en
dc.subject.cpcH01L21/31122en
dc.subject.cpcH01L21/32136en
dc.subject.cpcH01L31/1884en
dc.subject.cpcY02E10/50en
dc.subject.uspc216/76en
dc.subject.uspcother257/E21.011en
dc.subject.uspcother257/E21.252en
dc.subject.uspcother257/E21.253en
dc.subject.uspcother257/E21.311en
dc.subject.uspcother438/712en
dc.subject.uspcother438/720en
dc.titleReactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gasen
dc.typePatenten
dc.type.dcmitypeTexten
dc.type.patenttypeutilityen

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