Carrier capture delay and modulation bandwidth in an edge-emitting quantum dot laser

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dc.contributorVirginia Techen
dc.contributor.authorAsryan, Levon V.en
dc.contributor.authorWu, Y. C.en
dc.contributor.authorSuris, R. A.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:39Zen
dc.date.available2014-04-16T14:16:39Zen
dc.date.issued2011-03-01en
dc.description.abstractWe show that the carrier capture from the optical confinement layer into quantum dots (QDs) can strongly limit the modulation bandwidth omega(-3) dB of a QD laser. As a function of the cross-section sigma(n) of carrier capture into a QD, omega(-3) dB asymptotically approaches its highest value when sigma(n) -> infinity the case of instantaneous capture). With reducing sigma(n), omega(-3) dB decreases and becomes zero at a certain nonvanishing sigma(n)(min). The use of multiple-layers with QDs significantly improves the laser modulation response-omega(-3) dB is considerably higher in a multilayer structure as compared to a single-layer structure at the same dc current. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3571295]en
dc.description.sponsorshipU.S. Army Research Office (Grant No. W911-NF-08-1-0462)en
dc.description.sponsorshipChina Scholarship Councilen
dc.description.sponsorshipRussian Foundation for Basic Research (Grant No. 08-02-01337)en
dc.description.sponsorshipProgram "Fundamental Research in Nanotechnology and Nanomaterials" of the Presidium of the Russian Academy of Sciencesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAsryan, Levon V.; Wu, Yuchang; Suris, Robert A., "Carrier capture delay and modulation bandwidth in an edge-emitting quantum dot laser," Appl. Phys. Lett. 98, 131108 (2011); http://dx.doi.org/10.1063/1.3571295en
dc.identifier.doihttps://doi.org/10.1063/1.3571295en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47368en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/98/13/10.1063/1.3571295en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectThreshold current-densityen
dc.subjectConfined active-regionen
dc.subjectTemperature dependenceen
dc.subjectSemiconductor-lasersen
dc.subjectEfficiencyen
dc.titleCarrier capture delay and modulation bandwidth in an edge-emitting quantum dot laseren
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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