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Power device breakdown mechanism and characterization: review and perspective

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dc.contributor.authorZhang, Ruizheen
dc.contributor.authorZhang, Yuhaoen
dc.date.accessioned2023-09-25T14:47:15Zen
dc.date.available2023-09-25T14:47:15Zen
dc.date.issued2023-04en
dc.description.abstractBreakdown voltage (BV) is arguably one of the most critical parameters for power devices. While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking in many wide bandgap (WBG) and ultra-wide bandgap (UWBG) devices, such as the gallium nitride high electron mobility transistor and existing UWBG devices, due to the deployment of junction-less device structures or the inherent material challenges of forming p-n junctions. This paper starts with a survey of avalanche and non-avalanche breakdown mechanisms in WBG and UWBG devices, followed by the distinction between the static and dynamic BV. Various BV characterization methods, including the static and pulse I-V sweep, unclamped and clamped inductive switching, as well as continuous overvoltage switching, are comparatively introduced. The device physics behind the time- and frequency-dependent BV as well as the enabling device structures for avalanche breakdown are also discussed. The paper concludes by identifying research gaps for understanding the breakdown of WBG and UWBG power devices.en
dc.description.notesAcknowledgmentsThe authors acknowledge the funding support from the National Science Foundation Grants ECCS-2036740, ECCS-2202620, ECCS-2100504, and ECCS-2045001 as well as the CPES Industry Consortium at Virginia Tech. We greatly appreciate the continued collaboration with Prof. Florin Udrea, Prof. Wataru Saito, and Prof. Qiang Li as well as NexGen Power Systems.en
dc.description.sponsorshipNational Science Foundation [ECCS-2036740, ECCS-2202620, ECCS-2100504, ECCS-2045001]; CPES Industry Consortium at Virginia Tech; NexGen Power Systemsen
dc.description.versionPublished versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.35848/1347-4065/acb365en
dc.identifier.eissn1347-4065en
dc.identifier.issn0021-4922en
dc.identifier.issueSCen
dc.identifier.otherSC0806en
dc.identifier.urihttp://hdl.handle.net/10919/116325en
dc.identifier.volume62en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectpower electronicsen
dc.subjectpower semiconductor deviceen
dc.subjectwide bandgapen
dc.subjectultra-wide bandgapen
dc.subjectbreakdown voltageen
dc.subjectavalanche breakdownen
dc.subjectcompound semiconductoren
dc.titlePower device breakdown mechanism and characterization: review and perspectiveen
dc.title.serialJapanese Journal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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