Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers

dc.contributorVirginia Techen
dc.contributor.authorZhukov, A. E.en
dc.contributor.authorKryzhanovskaya, Natalia V.en
dc.contributor.authorZubov, Fedor I.en
dc.contributor.authorShernyakov, Y. M.en
dc.contributor.authorMaximov, Mikhail V.en
dc.contributor.authorSemenova, E. S.en
dc.contributor.authorYvind, K.en
dc.contributor.authorAsryan, Levon V.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:42Zen
dc.date.available2014-04-16T14:16:42Zen
dc.date.issued2012-01-01en
dc.description.abstractWe fabricated and tested a quantum well laser with asymmetric barrier layers. Such a laser has been proposed earlier to suppress bipolar carrier population in the optical confinement layer and thus to improve temperature-stability of the threshold current. As compared to the conventional reference laser structure, our laser with asymmetric barrier layers demonstrates reduced internal optical loss, lower threshold current density at elevated temperatures, and higher characteristic temperature (143 vs. 99K at 20 degrees C). (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676085]en
dc.description.sponsorshipFederal Target Program "Scientific and Scientific-Pedagogical Personnel of Innovative Russia" (arrangement no. 1.5 "Team research led by invited scientists," Grant No. 02.740.11.5161)en
dc.description.sponsorship(FLASH) from the Danish Council for Independent Research Grant No. 274-09-0247en
dc.description.sponsorshipEuropean Commission for funding through the Marie Curie Incoming International Fellowship (Project No. 252890)en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZhukov, Alexey E.; Kryzhanovskaya, Natalia V.; Zubov, Fedor I.; et al., "Improvement of temperature-stability in a quantum well laser with asymmetric barrier layers," Appl. Phys. Lett. 100, 021107 (2012); http://dx.doi.org/10.1063/1.3676085en
dc.identifier.doihttps://doi.org/10.1063/1.3676085en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47384en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/100/2/10.1063/1.3676085en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectQuantum wellsen
dc.subjectCurrent densityen
dc.subjectElectrical propertiesen
dc.subjectAluminumen
dc.subjectElectronsen
dc.titleImprovement of temperature-stability in a quantum well laser with asymmetric barrier layersen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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