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Domain wall broadening mechanism for domain size effect of enhanced piezoelectricity in crystallographically engineered ferroelectric single crystals

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dc.contributorVirginia Techen
dc.contributor.authorRao, W. F.en
dc.contributor.authorWang, Yu. U.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-01-17en
dc.date.accessioned2014-01-28T18:00:12Zen
dc.date.available2014-01-28T18:00:12Zen
dc.date.issued2007-01-01en
dc.description.abstractComputer modeling and simulation reveal a domain wall broadening mechanism that explains the domain size effect of enhanced piezoelectric properties in domain engineered ferroelectric single crystals. The simulation shows that, under electric field applied along the nonpolar axis of single crystal without domain wall motion, the domain wall broadens and serves as embryo of field-induced new phase, producing large reversible strain free from hysteresis. This mechanism plays a significant role in the vicinity of interferroelectric transition temperature and morphotropic phase boundary, where energy difference between stable and metastable phases is small. Engineered domain configuration fully exploits this domain wall broadening mechanism. (c) 2007 American Institute of Physics.en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRao, Wei-Feng; Wang, Yu U., "Domain wall broadening mechanism for domain size effect of enhanced piezoelectricity in crystallographically engineered ferroelectric single crystals," Appl. Phys. Lett. 90, 041915 (2007); http://dx.doi.org/10.1063/1.2435584en
dc.identifier.doihttps://doi.org/10.1063/1.2435584en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25164en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/90/4/10.1063/1.2435584en
dc.language.isoen_USen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectFielden
dc.subjectStatesen
dc.subjectPhysicsen
dc.titleDomain wall broadening mechanism for domain size effect of enhanced piezoelectricity in crystallographically engineered ferroelectric single crystalsen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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