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Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineeringen
dc.contributorVirginia Tech. Center for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorZhu, Yizhengen
dc.contributor.authorJain, Nikhilen
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorZhou, Y.en
dc.contributor.authorPriya, Shashanken
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T16:58:31Zen
dc.date.available2015-05-04T16:58:31Zen
dc.date.issued2013-07-14en
dc.description.abstractGrowth, structural, and band alignment properties of pulsed laser deposited amorphous BaTiO3 on epitaxial molecular beam epitaxy grown (110) Ge layer, as well as their utilization in low power transistor are reported. High-resolution x-ray diffraction demonstrated quasi-zero lattice mismatch of BaTiO3 on (110) Ge. Cross-sectional transmission electron microscopy micrograph confirms the amorphous nature of BaTiO3 layer as well as shows a sharp heterointerface between BaTiO3 and Ge with no traceable interfacial layer. The valence band offset, Delta E-v, of 1.99 +/- 0.05 eV at the BaTiO3/(110) Ge heterointerface is measured using x-ray photoelectron spectroscopy. The conduction band offset, Delta E-c, of 1.14 +/- 0.1 eV is calculated using the bandgap energies of BaTiO3 of 3.8 eV and Ge of 0.67 eV. These band offset parameters for carrier confinement and the interface chemical properties of the BaTiO3/(110) Ge system are significant advancement towards designing Ge-based p-and n-channel metal-oxide semiconductor field-effect transistors for low-power application. (C) 2013 AIP Publishing LLC.en
dc.format.extent7 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHudait, M. K.Zhu, Y.Jain, N.Maurya, D.Zhou, Y.Priya, S.(2013). Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge. Journal of Applied Physics, 114(2). doi: 10.1063/1.4813226en
dc.identifier.doihttps://doi.org/10.1063/1.4813226en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51977en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/114/2/10.1063/1.4813226en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectEpitaxyen
dc.subjectX-ray photoelectron spectroscopyen
dc.subjectMOSFETsen
dc.titleQuasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Geen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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