Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer

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dc.contributor.authorLiu, J. S.en
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorPandey, R.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorXie, Y.en
dc.contributor.authorHeremans, Jean J.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2019-02-25T20:51:52Zen
dc.date.available2019-02-25T20:51:52Zen
dc.date.issued2018-10-08en
dc.description.abstractAn InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer. X-ray analysis demonstrated near complete strain relaxation of the metamorphic buffer and a quasi-lattice-matched InAs/GaSb heterostructure, while high-resolution transmission electron microscopy revealed sharp, atomically abrupt heterointerfaces between the GaSb and InAs epilayers. In-plane magnetotransport analysis revealed Shubnikov-de Haas oscillations, indicating the presence of a dominant high mobility carrier, thereby testifying to the quality of the heterostructure and interfaces. Temperature-dependent current-voltage characteristics of fabricated InAs/GaSb tunnel diodes demonstrated Shockley-Read-Hall generation-recombination at low bias and band-to-band tunneling transport at high bias. The extracted conductance slope from the fabricated tunnel diodes increased with increasing temperature due to thermal emission (Ea ~ 0.48 eV) and trap-assisted tunneling. Thus, this work illustrates the significance of defect control in the heterointegration of metamorphic InAs/GaSb tunnel diode heterostructures on silicon when using GaAs1-ySby dislocation filtering buffers.en
dc.description.sponsorshipNational Science Foundationen
dc.description.sponsorshipNSF: ECCS-1348653en
dc.description.sponsorshipNSF: ECCS- 1507950en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1063/1.5042064en
dc.identifier.urihttp://hdl.handle.net/10919/87773en
dc.identifier.volume8en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsCreative Commons Attribution 3.0 United Statesen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/us/en
dc.titleHeterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering bufferen
dc.title.serialAIP Advancesen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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