Affect of annealing on uniform and nonuniform strains in a sputtered Mo film on Si

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dc.contributorVirginia Tech. Department of Materials Engineeringen
dc.contributor.authorAdler, Thomasen
dc.contributor.authorHouska, Charles R.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:29Zen
dc.date.available2015-05-21T19:47:29Zen
dc.date.issued1979en
dc.description.abstractSputtered films of 1.5 μm of Mo deposited on (111) ‐oriented Si failed either by blistering or localized eruptions after various thermal treatments. Investigations were carried out to determine the amount of strain in the film associated with this unstable mechanical behavior. Two types of measurements were employed. One employs macroscopic interferometer measurements to measure deflection and the other x‐ray diffraction. A separation is made of intrinsic and thermally induced strains. The intrinsic strains are believed to be due mainly to Ar atoms embedded during sputtering which remain throughout annealing treatments. These atoms also introduce a broadening of the diffraction lines because of the special constraints associated within films. This effect is separated from the usual line broadening due to dislocations and small particle size. Annealing treatments reconfirm that dislocation mechanisms are not as effective in relieving nonuniform microstrain in films as they are in cold‐work filings of the same material.en
dc.description.sponsorshipNational Science Foundation (U.S.) - Contract No. DMR 75-17201.en
dc.format.extent7 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAdler, T., Houska, C. R. (1979). Affect of annealing on uniform and nonuniform strains in a sputtered Mo film on Si. Journal of Applied Physics, 50(5), 3288-3293. doi: 10.1063/1.326369en
dc.identifier.doihttps://doi.org/10.1063/1.326369en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52461en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/50/5/10.1063/1.326369en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectAnnealingen
dc.subjectSputter depositionen
dc.subjectThin filmsen
dc.subjectMolybdenumen
dc.subjectInterferometersen
dc.titleAffect of annealing on uniform and nonuniform strains in a sputtered Mo film on Sien
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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