Statistics for Germanium Nanosheet-FETs Scaled to Subnanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs

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Germanium Nanosheet-FETs Scaled to Subnanometer Node Utilizing Monolithically Integrated Lattice Matched Ge/AlAs and Strained Ge/InGaAs 131

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IEEE TED-2022-10-2656-R.R1 Accepted version.pdf 274

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