Statistics for Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors
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| Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors | 209 |
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| ao-2021-06203m.R1_Proof_hi.pdf | 93 |
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