Statistics for Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

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Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors 616

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Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors.pdf 640

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