Statistics for Effect of Out-Tunneling Leakage and Electron-Hole Asymmetry on Modulation Response of Semiconductor Double Tunneling-Injection Quantum Dot Lasers

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Effect of Out-Tunneling Leakage and Electron-Hole Asymmetry on Modulation Response of Semiconductor Double Tunneling-Injection Quantum Dot Lasers 318

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Kar_S_T_2017.pdf 176
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