Browsing by Author "Datta, Suman"

Now showing 1 - 7 of 7
  • Thumbnail Image
    Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
    Zhu, Yizheng; Jain, Nikhil; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy K.; Hudait, Mantu K. (American Institute of Physics, 2013-01-14)
    The experimental study of the valence band offset (Delta E-v) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a Delta E-v of 0.39 +/- 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be similar to 0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775606]
  • Thumbnail Image
    Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
    Zhu, Yizheng; Jain, Nikhil; Vijayaraghavan, S.; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy K.; Monsegue, Niven; Hudait, Mantu K. (American Institute of Physics, 2012-11-01)
    The compositional dependence of effective tunneling barrier height (E-beff) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in InxGa1-xAs and 60% to 65% in GaAs1-ySby layers, the E-beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E-beff of 0.21eV show 2x improvement in ON-state current compared to the device with E-beff of 0.30 eV. On contrary, the value of E-beff was decreased from 0.21 eV to -0.03 eV due to the presence of high defect density at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E-beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764880]
  • Thumbnail Image
    Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
    Rajamohanan, Bijesh; Mohata, Dheeraj K.; Zhu, Yan; Hudait, Mantu K.; Jiang, Zhengping; Hollander, Matthew; Klimeck, Gerhard; Datta, Suman (American Institute of Physics, 2014-01-23)
    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.
  • Thumbnail Image
    Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
    Ali, A.; Madan, H. S.; Kirk, A. P.; Zhao, D. A.; Mourey, D. A.; Hudait, Mantu K.; Wallace, R. M.; Jackson, T. N.; Bennett, B. R.; Boos, J. B.; Datta, Suman (AIP Publishing, 2010-10-01)
    N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3/GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (D-it) whereas the PEALD Al2O3/GaSb MOSCAPs show unpinned C-V characteristics (low D-it). The reduction in Sb2O3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2O3/GaSb interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492847]
  • Thumbnail Image
    Heterogeneous integration of InAs/GaSb tunnel diode structure on silicon using 200 nm GaAsSb dislocation filtering buffer
    Liu, J. S.; Clavel, Michael B.; Pandey, R.; Datta, Suman; Xie, Y.; Heremans, Jean J.; Hudait, Mantu K. (AIP Publishing, 2018-10-08)
    An InAs/GaSb tunnel diode structure was heterogeneously integrated on silicon by solid source molecular beam epitaxy using a 200 nm strained GaAs1-ySby dislocation filtering buffer. X-ray analysis demonstrated near complete strain relaxation of the metamorphic buffer and a quasi-lattice-matched InAs/GaSb heterostructure, while high-resolution transmission electron microscopy revealed sharp, atomically abrupt heterointerfaces between the GaSb and InAs epilayers. In-plane magnetotransport analysis revealed Shubnikov-de Haas oscillations, indicating the presence of a dominant high mobility carrier, thereby testifying to the quality of the heterostructure and interfaces. Temperature-dependent current-voltage characteristics of fabricated InAs/GaSb tunnel diodes demonstrated Shockley-Read-Hall generation-recombination at low bias and band-to-band tunneling transport at high bias. The extracted conductance slope from the fabricated tunnel diodes increased with increasing temperature due to thermal emission (Ea ~ 0.48 eV) and trap-assisted tunneling. Thus, this work illustrates the significance of defect control in the heterointegration of metamorphic InAs/GaSb tunnel diode heterostructures on silicon when using GaAs1-ySby dislocation filtering buffers.
  • Thumbnail Image
    Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
    Zhu, Yizheng; Jain, Nikhil; Vijayaraghavan, S.; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, W. K.; Monsegue, Niven; Hudait, Mantu K. (American Institute of Physics, 2012-07-15)
    The structural, morphological, defect properties, and OFF state leakage current mechanism of mixed As-Sb type-II staggered gap GaAs-like and InAs-like interface heterostructure tunnel field effect transistors (TFETs) grown on InP substrates using linearly graded InxAl1-xAs buffer by molecular beam epitaxy are investigated and compared. Symmetric relaxation of >90% and >75% in the two orthogonal < 110 > directions with minimal lattice tilt was observed for the terminal GaAs0.35Sb0.65 and In0.7Ga0.3As active layers of GaAs-like and InAs-like interface TFET structures, respectively, indicating that nearly equal numbers of alpha and beta dislocations were formed during the relaxation process. Atomic force microscopy reveals extremely ordered crosshatch morphology and low root mean square roughness of similar to 3.17 nm for the InAs-like interface TFET structure compared to the GaAs-like interface TFET structure of similar to 4.46 nm at the same degree of lattice mismatch with respect to the InP substrates. The GaAs-like interface exhibited higher dislocation density, as observed by cross-sectional transmission electron microscopy, resulting in the elongation of reciprocal lattice point of In0.7Ga0.3As channel and drain layers in the reciprocal space maps, while the InAs-like interface creates a defect-free interface for the pseudomorphic growth of the In0.7Ga0.3As channel and drain layers with minimal elongation along the Delta omega direction. The impact of the structural differences between the two interface types on metamorphic TFET devices was demonstrated by comparing p(+)-i-n(+) leakage current of identical TFET devices that were fabricated using GaAs-like and InAs-like interface TFET structures. Higher OFF state leakage current dominated by band-to-band tunneling process due to higher degree of defects and dislocations was observed in GaAs-like interface compared to InAs-like interface where type-II staggered band alignment was well maintained. Significantly lower OFF state leakage current dominated by the field enhanced Shockley-Read-Hall generation-recombination process at different temperatures was observed in InAs-like TFET structure. The fixed positive charge at the source/channel heterointerface influences the band lineup substantially with charge density greater than 1 x 10(12)/cm(2) and the band alignment is converted from staggered gap to broken gap at similar to 6 x 10(12)/cm(2). Clearly, InAs-like interface TFET structure exhibited 4x lower OFF state leakage current, which is attributed primarily to the impact of the layer roughness, defect properties on the carrier recombination rate, suggesting great promise for metamorphic TFET devices for high-performance, and ultra-low power applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737462]
  • Thumbnail Image
    Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
    Zhu, Y.; Jain, N.; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, A. K.; Hudait, Mantu K. (AIP Publishing, 2012-09-01)
    The structural properties and band offset determination of p-channel staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 heterostructure tunnel field-effect transistor (TFET) grown by molecular beam epitaxy (MBE) were investigated. High resolution x-ray diffraction revealed that the active layers are strained with respect to "virtual substrate." Dynamic secondary ion mass spectrometry confirmed an abrupt junction profile at the In0.7Ga0.3As/GaAs0.35Sb0.65 heterointerface and minimal level of intermixing between As and Sb atoms. The valence band offset of 0.37 +/- 0.05 eV was extracted from x-ray photoelectron spectroscopy. A staggered band lineup was confirmed at the heterointerface with an effective tunneling barrier height of 0.13 eV. Thus, MBE-grown staggered gap In0.7Ga0.3As/GaAs0.35Sb0.65 TFET structures are a promising p-channel option to provide critical guidance for the future design of mixed As/Sb type-II based complementary logic and low power devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752115]