Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

TR Number
Date
2014-01-23
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract

In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.

Description
Keywords
III-V semiconductors, Atomic layer deposition, Valence bands, Gas liquid interfaces, Conduction bands
Citation
Rajamohanan, Bijesh, Mohata, Dheeraj, Zhu, Yan, Hudait, Mantu, Jiang, Zhengping, Hollander, Matthew, Klimeck, Gerhard, Datta, Suman (2014). Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors. Journal of Applied Physics, 115(4). doi: 10.1063/1.4862042